The Resource Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]

Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]

Label
Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]
Title
Characterization in silicon processing
Title remainder
editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]
Contributor
Book designer
Contributor
Editor
Subject
Genre
Language
  • eng
  • eng
Summary
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems
Member of
Cataloging source
MiAaPQ
Dewey number
620.1/93
Illustrations
illustrations
Index
index present
Language note
English
LC call number
QC611.8.S5
LC item number
.C48 1993
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Strausser, Yale
  • Simon, Christopher
  • Blumenthal, Roc
Series statement
Materials Characterization Series
http://library.link/vocab/subjectName
  • Silicon
  • Electric conductors
  • Semiconductor films
  • Surface chemistry
Label
Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]
Instantiates
Publication
Copyright
Note
Description based upon print version of record
Bibliography note
Includes bibliographical references at the end of each chapters and index
Carrier category
online resource
Carrier category code
cr
Content category
text
Content type code
txt
Contents
  • Front Cover; Characterization in Silicon Processing; Copyright page; Table of Contents; Preface to Series; Preface; Contributors; CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH; 1.1 Introduction; 1.2 Silicon Epitaxial Growth; 1.3 Film and Process Characterization; 1.4 Selective Growth; 1.5 Si1 - xGex Epitaxial Growth; 1.6 Si 1 - xGex Material Characterization; 1.7 Summary; Acknowledgments; References; CHAPTER 2. POLYSILICON CONDUCTORS; 2.1 Introduction; 2.2 Deposition; 2.3 Doping; 2.4 Patterning; 2.5 Subsequent Processing; References
  • CHAPTER 3. SILICIDES3.1 Introduction; 3.2 Formation of Suicides; 3.3 The Silicide-Silicon Interface; 3.4 Oxidation of Silicides; 3.5 Dopant Redistribution During Silicide Formation; 3.6 Stress in Silicides; 3.7 Stability of Silicides; 3.8 Summary; References; CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS; 4.1 Introduction; 4.2 Film Deposition; 4.3 Film Growth; 4.4 Encapsulation; 4.5 Reliability Concerns; References; CHAPTER 5. TUNGSTEN-BASED CONDUCTORS; 5.1 Applications for ULSI Processing; 5.2 Deposition Principles; 5.3 Blanket Tungsten Deposition; 5.4 Selective Tungsten Deposition
  • ReferencesCHAPTER 6. BARRIER FILMS; 6.1 Introduction; 6.2 Characteristics of Barrier Films; 6.3 Types of Barrier Films; 6.4 Processing Barrier Films; 6.5 Examples of Barrier Films; 6.6 Summary; Acknowledgments; References; APPENDIX: TECHNIQUE SUMMARIES; 1 Auger Electron Spectroscopy (AES); 2 Ballistic Electron Emission Microscopy (BEEM); 3 Capacitance-Voltage (C-V) Measurements; 4 Deep Level Transient Spectroscopy (DLTS); 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS); 6 Electron Beam Induced Current (EBIC) Microscopy; 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
  • 8 Focused Ion Beams (FIBs)9 Fourier Transform Infrared Spectroscopy (FTIR); 10 Hall Effect Resistivity Measurements; 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS); 12 Light Microscopy; 13 Low-Energy Electron Diffraction (LEED); 14 Neutron Activation Analysis (NAA); 15 Optical Scatterometry; 16 Photoluminescence (PL); 17 Raman Spectroscopy; 18 Reflection High-Energy Electron Diffraction (RHEED); 19 Rutherford Backscattering Spectrometry (RBS); 20 Scanning Electron Microscopy (SEM); 21 Scanning Transmission Electron Microscopy (STEM)
  • 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)23 Sheet Resistance and the Four Point Probe; 24 Spreading Resistance Analysis (SRA); 25 Static Secondary Ion Mass Spectrometry (Static SIMS); 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling; 27 Total Reflection X-Ray Fluorescence Analysis (TXRF); 28 Transmission Electron Microscopy (TEM); 29 Variable-Angle Spectroscopic Ellipsometry (VASE); 30 X-Ray Diffraction (XRD); 31 X-Ray Fluorescence (XRF); 32 X-Ray Photoelectron Spectroscopy (XPS); Index
Dimensions
unknown
Extent
1 online resource (255 p.)
Form of item
online
Isbn
9780080523422
Media category
computer
Media type code
c
Specific material designation
remote
System control number
  • (CKB)111086367650112
  • (EBL)1911158
  • (SSID)ssj0000071552
  • (PQKBManifestationID)11962494
  • (PQKBTitleCode)TC0000071552
  • (PQKBWorkID)10090227
  • (PQKB)10089767
  • (MiAaPQ)EBC1911158
  • (EXLCZ)99111086367650112
Label
Characterization in silicon processing : editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]
Publication
Copyright
Note
Description based upon print version of record
Bibliography note
Includes bibliographical references at the end of each chapters and index
Carrier category
online resource
Carrier category code
cr
Content category
text
Content type code
txt
Contents
  • Front Cover; Characterization in Silicon Processing; Copyright page; Table of Contents; Preface to Series; Preface; Contributors; CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH; 1.1 Introduction; 1.2 Silicon Epitaxial Growth; 1.3 Film and Process Characterization; 1.4 Selective Growth; 1.5 Si1 - xGex Epitaxial Growth; 1.6 Si 1 - xGex Material Characterization; 1.7 Summary; Acknowledgments; References; CHAPTER 2. POLYSILICON CONDUCTORS; 2.1 Introduction; 2.2 Deposition; 2.3 Doping; 2.4 Patterning; 2.5 Subsequent Processing; References
  • CHAPTER 3. SILICIDES3.1 Introduction; 3.2 Formation of Suicides; 3.3 The Silicide-Silicon Interface; 3.4 Oxidation of Silicides; 3.5 Dopant Redistribution During Silicide Formation; 3.6 Stress in Silicides; 3.7 Stability of Silicides; 3.8 Summary; References; CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS; 4.1 Introduction; 4.2 Film Deposition; 4.3 Film Growth; 4.4 Encapsulation; 4.5 Reliability Concerns; References; CHAPTER 5. TUNGSTEN-BASED CONDUCTORS; 5.1 Applications for ULSI Processing; 5.2 Deposition Principles; 5.3 Blanket Tungsten Deposition; 5.4 Selective Tungsten Deposition
  • ReferencesCHAPTER 6. BARRIER FILMS; 6.1 Introduction; 6.2 Characteristics of Barrier Films; 6.3 Types of Barrier Films; 6.4 Processing Barrier Films; 6.5 Examples of Barrier Films; 6.6 Summary; Acknowledgments; References; APPENDIX: TECHNIQUE SUMMARIES; 1 Auger Electron Spectroscopy (AES); 2 Ballistic Electron Emission Microscopy (BEEM); 3 Capacitance-Voltage (C-V) Measurements; 4 Deep Level Transient Spectroscopy (DLTS); 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS); 6 Electron Beam Induced Current (EBIC) Microscopy; 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
  • 8 Focused Ion Beams (FIBs)9 Fourier Transform Infrared Spectroscopy (FTIR); 10 Hall Effect Resistivity Measurements; 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS); 12 Light Microscopy; 13 Low-Energy Electron Diffraction (LEED); 14 Neutron Activation Analysis (NAA); 15 Optical Scatterometry; 16 Photoluminescence (PL); 17 Raman Spectroscopy; 18 Reflection High-Energy Electron Diffraction (RHEED); 19 Rutherford Backscattering Spectrometry (RBS); 20 Scanning Electron Microscopy (SEM); 21 Scanning Transmission Electron Microscopy (STEM)
  • 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)23 Sheet Resistance and the Four Point Probe; 24 Spreading Resistance Analysis (SRA); 25 Static Secondary Ion Mass Spectrometry (Static SIMS); 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling; 27 Total Reflection X-Ray Fluorescence Analysis (TXRF); 28 Transmission Electron Microscopy (TEM); 29 Variable-Angle Spectroscopic Ellipsometry (VASE); 30 X-Ray Diffraction (XRD); 31 X-Ray Fluorescence (XRF); 32 X-Ray Photoelectron Spectroscopy (XPS); Index
Dimensions
unknown
Extent
1 online resource (255 p.)
Form of item
online
Isbn
9780080523422
Media category
computer
Media type code
c
Specific material designation
remote
System control number
  • (CKB)111086367650112
  • (EBL)1911158
  • (SSID)ssj0000071552
  • (PQKBManifestationID)11962494
  • (PQKBTitleCode)TC0000071552
  • (PQKBWorkID)10090227
  • (PQKB)10089767
  • (MiAaPQ)EBC1911158
  • (EXLCZ)99111086367650112

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