The Resource Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors, by Mengqi Fu, (electronic resource)

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors, by Mengqi Fu, (electronic resource)

Label
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
Title
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
Statement of responsibility
by Mengqi Fu
Creator
Author
Author
Subject
Language
eng
Summary
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices
Member of
http://library.link/vocab/creatorName
Fu, Mengqi
Dewey number
620.5
http://bibfra.me/vocab/relation/httpidlocgovvocabularyrelatorsaut
gwborbWn-3w
LC call number
  • QC176.8.N35
  • T174.7
Literary form
non fiction
Nature of contents
dictionaries
Series statement
Springer Theses, Recognizing Outstanding Ph.D. Research,
http://library.link/vocab/subjectName
  • Engineering
  • Surfaces (Physics)
  • Optical materials
  • Nanoscale Science and Technology
  • Nanotechnology and Microengineering
  • Semiconductors
  • Characterization and Evaluation of Materials
  • Electronic Circuits and Devices
  • Optical and Electronic Materials
Label
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors, by Mengqi Fu, (electronic resource)
Instantiates
Publication
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Introduction -- Preparation, characterization and parameter extraction of InAs nanowire-based devices -- Size effect on the electrical properties of InAs nanowires -- Crystal phase- and orientation-dependent electrical properties of InAs nanowires -- Influence of growth methods on the electrical properties of InAs nanowires -- Summary
Dimensions
unknown
Extent
1 online resource (113 pages)
Form of item
online
Isbn
9789811334443
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other control number
10.1007/978-981-13-3444-3
Sound
unknown sound
Specific material designation
remote
System control number
  • (CKB)4100000007181152
  • (MiAaPQ)EBC5609379
  • (DE-He213)978-981-13-3444-3
  • (EXLCZ)994100000007181152
Label
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors, by Mengqi Fu, (electronic resource)
Publication
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Introduction -- Preparation, characterization and parameter extraction of InAs nanowire-based devices -- Size effect on the electrical properties of InAs nanowires -- Crystal phase- and orientation-dependent electrical properties of InAs nanowires -- Influence of growth methods on the electrical properties of InAs nanowires -- Summary
Dimensions
unknown
Extent
1 online resource (113 pages)
Form of item
online
Isbn
9789811334443
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other control number
10.1007/978-981-13-3444-3
Sound
unknown sound
Specific material designation
remote
System control number
  • (CKB)4100000007181152
  • (MiAaPQ)EBC5609379
  • (DE-He213)978-981-13-3444-3
  • (EXLCZ)994100000007181152

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